Light‐Emitting Diodes: Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition (Adv. Mater. Interfaces 12/2020). Issue 12 (23rd June 2020)

• Record Type: Journal Article
• Authors: Kim, Gi‐Hwan; Noh, Kyeongchan; Han, Jisu; Kim, Minsu; Oh, Nuri; Lee, Woongkyu; Na, Hyon Bin; Shin, Chansun; Yoon, Tae‐Sik; Lim, Jaehoon; Cho, Seong‐Yong
• Is Part Of: Advanced materials interfaces. Volume 7:Issue 12(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-06-23
• Subjects: atomic layer deposition -- device lifetime -- interfaces -- quantum dot light‐emitting diodes (QD‐LEDs) -- ZnO; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202070067
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : The atomic layer deposited (ALD) ZnO significantly enhances the luminance and device lifetime of green‐emitting quantum dot (QD) light‐emitting diodes. In article number 2000343, Jaehoon Lim, Seong‐Yong Cho, and coworkers show that ALD ZnO provides improved interfacial property with QDs due to the smooth roughness from the ALD growth nature and ligand exchange behavior.