Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation. Issue 204 (2nd January 2020)

• Record Type: Journal Article
• Authors: Shamim, Mohammed Zubair Mohammed; Persheyev, Saydulla; Zaidi, Monji; Usman, Mohammed; Shiblee, Mohammad; Ali, Syed Jaffar; Rahman, Mohammad Rizwanur
• Is Part Of: Integrated ferroelectrics. Issue 204(2020)
• Page Start: 47
• Page End: 57
• Publication Date: 2020-01-02
• Subjects: Hydrogenated amorphous silicon -- excimer laser crystallization -- electron field emission display; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2019.1674988
• Languages: English
• ISSNs: 1058-4587

Abstract

Abstract: Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10 −6 A and low turn-on emission threshold of ∼14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies.