Cite
HARVARD Citation
Wang, K. et al. (2020). A Pure 2H‐MoS2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator. Advanced Electronic Materials. p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Wang, K. et al. (2020). A Pure 2H‐MoS2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator. Advanced Electronic Materials. p. n/a. [Online].