Thin‐Film‐Based Integrated High‐Transition‐Temperature Superconductor Devices. (25th January 2019)

• Record Type: Journal Article
• Authors: Balasubramanian, Krishna; Xing, Xinxi; Strugo, Nir; Hayat, Alex
• Is Part Of: Advanced functional materials. Volume 30:Number 18(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-01-25
• Subjects: high‐transition‐temperature (HTS) devices -- HTS photon detection -- HTS superconducting quantum interference devices -- integration -- tunnel diodes; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201807379
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Since the discovery of superconductivity at temperatures above the technologically promising liquid nitrogen temperatures, applications based on superconductors have expanded and are being put to commercial use. However, superconductivity at higher temperatures typically occurs in complex materials requiring stringent material and environmental constraints. Such restraints make the realization and integration of these materials with normal materials a nontrivial aspect. In this progress report, unique features of these superconductors in terms of their synthesis, physical properties determining interface electrical transport, and their applications are discussed. A detailed progress report on these applications with remarks on efforts taken to integrate these devices with traditional platforms and semiconducting materials is provided. Abstract : Superconductivity at higher temperatures typically occurs in complex materials requiring stringent material and environmental constrains. Such restrains make realization and integration of these materials with normal materials a non‐trivial aspect. In this progress report, unique features of these superconductors, in terms of their synthesis, physical properties determining interface electrical transport, and their applications, are discussed.