Development of High‐Efficiency n‐Type Front and Back Contact Passivated Emitter and Rear Locally Diffused Solar Cells Using Atmospheric Pressure Chemical Vapor Deposition of Phosphosilicate Glass and Laser Processing. Issue 11 (5th May 2020)

• Record Type: Journal Article
• Authors: Yan, Xia; Chen, Ning; Bin Suhaimi, Firdaus; Zhang, Xinyu; Wang, Qi; Jin, Hao; Shanmugam, Vinodh; Duttagupta, Shubham
• Is Part Of: Physica status solidi. Volume 217:Issue 11(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-05-05
• Subjects: back surface field -- chemical vapor deposition -- passivated emitter -- phosphosilicate glass -- rear locally diffused structure -- solar cells; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202000117
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Industrial bifacial n ‐type front and back contact ( n FAB) silicon solar cells, consisting of a boron‐doped p + emitter and a phosphorus‐doped n + back surface field (BSF), are known to give good bifaciality, high and stabilized efficiency. One possible approach to further enhance the cell efficiency is to convert conventional passivated emitter and rear totally diffused (PERT) into rear locally diffused (PERL) structure. Herein, bifacial n FAB PERT and PERL cells are fabricated by combining atmospheric pressure chemical vapor deposition (APCVD) of phosphosilicate glass (PSG) as doping source and laser processing. For PERL cells, two approaches are studied to locally form phosphorus‐doped BSF: 1) laser doping, and 2) laser ablation of a diffusion barrier layer. For ablation approach, an alkaline treatment is introduced immediately after laser process, which leads to the formation of locally textured BSF. Due to this locally textured contact, the resultant fill factor ( FF ) and series resistance ( R s ) loss of the PERL cells are even less than that of the reference PERT cells. As a result, the champion cell of PERL shows a good efficiency of 21.3% with open‐circuit voltage ( V oc ) of 662 mV, short‐circuit current density ( J sc ) of 39.6 mA cm −2, and a high FF of 81.1%. Abstract : This work studies two industry‐feasible approaches for fabricating n ‐type passivated emitter and rear locally diffused ( n PERL) solar cells: via 1) laser doping, and 2) laser ablation. Atmospheric pressure chemical vapor deposition (APCVD) and laser processes are adopted to form locally back surface field (BSF). The champion n PERL cell shows an efficiency of 21.3% with a high fill factor of 81.1%.