Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors. (26th March 2020)

• Record Type: Journal Article
• Authors: Arthur, Joshua N.; Chaudhry, Mujeeb Ullah; Woodruff, Maria A.; Pandey, Ajay K.; Yambem, Soniya D.
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 5(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-03-26
• Subjects: gate conductance -- hygroscopic insulators, field‐effect transistors -- organic transistors, thin‐film transistors -- sensors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201901079
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Hygroscopic insulator field‐effect transistors (HIFETs) are a class of low‐voltage‐operation organic transistors that have been successfully demonstrated for biosensing applications through modification of the gate electrode. However, modification of the gate electrode often leads to nonideal transistor characteristics due to changes in its intrinsic electrical properties. This work investigates the effect of gate conductance in HIFETs using poly(3, 4‐ethylenedioxythiophene):poly(styrene sulfonate) as a model gate electrode. It is revealed that a reduction in gate conductance results in a reduction in the effective gate voltage and plays an important role in defining HIFET characteristics. Key figures of merit, including ON/OFF ratio, threshold voltage, transconductance, and saturation mobility increase with increasing gate conductance and reach a plateau once sufficient gate conductance is attained. This effect is attributed to a decrease in the effective gate voltage along the gate electrode arising from its resistivity when a gate leakage current is present. These results are widely applicable and serve as design rules for HIFET device optimization. Abstract : The effect of gate electrode conductance on the performance of hygroscopic insulator field‐effect transistors is systematically investigated. In sensing applications, the gate electrode is modified to facilitate interaction with an analyte, but this can degrade performance due to reduced gate conductance. This study provides widely applicable guidelines for the design and optimization of such sensors.