Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing. (8th May 2020)

• Record Type: Journal Article
• Authors: Yarali, Emre; Faber, Hendrik; Yengel, Emre; Seitkhan, Akmaral; Loganathan, Kalaivanan; Harrison, George T.; Adilbekova, Begimai; Lin, Yuanbao; Ma, Chun; Firdaus, Yuliar; Anthopoulos, Thomas D.
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 6(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-05-08
• Subjects: metal oxide dielectrics -- metal oxide heterojunctions -- metal oxide semiconductors -- photonic curing -- thin‐film transistors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202000028
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Solution‐processed metal oxide thin‐film transistors (TFTs) represent a promising technology for applications in existing but also emerging large‐area electronics. However, high process temperatures and lengthy annealing times represent two remaining technical challenges. Different approaches aiming to address these challenges have been proposed but progress remains modest. Here, the development of high electron mobility metal oxide TFTs based on photonically converted Al2 O3 /ZrO2 and In2 O3 /ZnO bilayers acting as the high‐ k dielectric and electron‐transporting channel, respectively is described. Sequential solution‐phase deposition and photonic processing lead to low substrate temperature (<200 °C) while minimizing the overall process time to less than 60 s without compromising the quality of the formed layers. The bilayer Al2 O3 /ZrO2 dielectric exhibits low leakage current density (10 −6 A cm −2 at 1 MV cm −1 ), high geometric capacitance (≈120 nF cm −2 ) and breakdown electric field of ≈1 MV cm −1 . Combining Al2 O3 /ZrO2 with a photonically converted In2 O3 /ZnO heterojunction channels, results in TFTs with high electron mobility (19 cm 2 V −1 s− 1 ), low operation voltage (≤2 V), high current on/off ratio (>10 6 ), and low subthreshold swing (108 mV dec −1 ), that can be manufactured even onto thermally sensitive polymer substrates. The work is a significant step toward all‐photonic processed metal oxide electronics. Abstract : High‐electron‐mobility metal oxide transistors based on photonically‐processed Al2 O3 /ZrO2 and In2 O3 /ZnO bilayers, acting as the high‐ k dielectric and electron‐transporting channel, respectively, are demonstrated. The photonic‐based conversion process enables rapid manufacturing of metal oxide transistors while simultaneously minimizing the thermal budget making it compatible with temperature‐sensitive substrate materials.