Interfacial Band Engineering of MoS2/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts. (18th March 2020)

• Record Type: Journal Article
• Authors: Matković, Aleksandar; Petritz, Andreas; Schider, Gerburg; Krammer, Markus; Kratzer, Markus; Karner‐Petritz, Esther; Fian, Alexander; Gold, Herbert; Gärtner, Michael; Terfort, Andreas; Teichert, Christian; Zojer, Egbert; Zojer, Karin; Stadlober, Barbara
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 5(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-03-18
• Subjects: MoS 2 -- thin‐film transistors -- Schottky barrier -- self‐assembled monolayers -- work‐function engineering; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202000110
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Bottom‐contact architectures with common electrode materials such as gold are crucial for the integration of 2D semiconductors into existing device concepts. The high contact resistance to gold—especially for bottom contacts—is, however, a general problem in 2D semiconductor thin‐film transistors. Pyrimidine‐containing self‐assembled monolayers on gold electrodes are investigated for tuning the electrode work functions in order to minimize that contact resistance. Their frequently ignored asymmetric and bias‐dependent nature is recorded by Kelvin probe force microscopy through a direct mapping of the potential drop across the channel during device operation. A reduction of the contact resistances exceeding two orders of magnitude is achieved via a suitable self‐assembled monolayer, which vastly improves the overall device performance. Abstract : The contact resistance between gold and MoS2 is minimized by electrode‐work‐function engineering employing pyrimidine‐containing self‐assembled monolayers. The proposed concept of electrode modification allows for a reliable integration of 2D semiconductors into bottom‐contact architectures. A reduction of the contact resistances exceeding two orders of magnitude is achieved via a suitable self‐assembled monolayer treatment, which vastly improves the overall device performance.