Solution‐Processed High‐Performance p‐Type Perovskite NdAlO3 Thin Films for Transparent Electronics. (22nd January 2020)

• Record Type: Journal Article
• Authors: Xin, Zhijie; Ding, Yanan; Zhu, Yixin; Fu, Chuanyu; Yao, Zhao; Chen, Qian; Liu, Guoxia; Shan, Fukai
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-22
• Subjects: perovskite NdAlO 3 -- p–n junctions -- p‐type perovskites -- spin coating -- thin‐film transistors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201901110
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Transparent oxide semiconductors exhibit great potential as fundamental building blocks for electronic applications. However, the lack of high‐performance p‐type oxide materials limits their potential applications for transparent electronics. Ternary p‐type perovskite NdAlO3 thin films are prepared by spin coating and annealed at various temperatures. It is demonstrated that neodymium vacancies (VNd ) is generated in NdAlO3 thin film, and the presence of VNd results in high hole mobility. The thin‐film transistors (TFTs) based on NdAlO3 thin film are integrated and exhibit typical p‐channel transistor behavior. The TFT based on NdAlO3 thin film annealed at 700 °C exhibits an optimized electrical performance, including a field‐effect mobility ( µ FE ) of 0.19 cm 2 V −1 s −1 and an on/off current ratio ( I on / I off ) of ≈10 5 . When high‐ k Al2 O3 dielectric is integrated into the TFTs, the µ FE and I on / I off are further improved to 9.93 cm 2 V −1 s −1 and ≈10 6, respectively. The fabrication of a p–n junction based on p‐NdAlO3 /n‐In2 O3 heterojunction further confirms the excellent p‐type performance of the perovskite NdAlO3 thin films. This work not only demonstrates the possibility of p‐type perovskite NdAlO3 thin films applicable for transparent electronics, but also provides guidelines for the design of novel p‐type oxide semiconductors. Abstract : Perovskite NdAlO3 thin films are fabricated by a facile solution process and annealed at various temperatures. They exhibit excellent p‐type behaviors. The electrical performances of the p‐type NdAlO3 semiconductors are confirmed by integrating the thin films into transistors and p–n diode. The p‐type conductivity is due to the presence of Nd vacancies in the NdAlO3 thin films.