Cite
HARVARD Citation
Inotsume, S. et al. (2020). Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer. Physica status solidi. 257 (4), p. n/a. [Online].
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Inotsume, S. et al. (2020). Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer. Physica status solidi. 257 (4), p. n/a. [Online].