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HARVARD Citation
Zhao, Y. et al. (2020). Comparative Study of Characteristics and Interface States with and without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates. Physica status solidi. 217 (6), p. n/a. [Online].