Cite
HARVARD Citation
Heuken, L. et al. (2020). Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate. Physica status solidi. 217 (7), p. n/a. [Online].