Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs. (22nd January 2020)

• Record Type: Journal Article
• Authors: Zhou, Wenhan; Zhang, Shengli; Wang, Yangyang; Guo, Shiying; Qu, Hengze; Bai, Pengxiang; Li, Zhi; Zeng, Haibo
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-22
• Subjects: 2D FETs -- arsenic phosphorus -- ballistic transport -- electronic properties -- first‐principle simulations; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201901281
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: The performance limits of monolayer arsenic‐phosphorus (AsP) field‐effect transistors (FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices. The monolayer AsP holds a direct bandgap of 0.92 eV with significantly anisotropic electronic properties. Transfer characteristics of n‐type and p‐type AsP FETs are thoroughly investigated by scaling channel length in the armchair and zigzag direction, respectively. The simulation results indicate that AsP FETs exhibit exceptional device characteristics, such as high on‐state current, short delay time, and low power consumption. Moreover, transfer characteristics demonstrate superior anisotropy on in‐plane electrical transport properties. In particular, in the zigzag direction, even if the channel length is scaled down to 4 nm, the device performance still can satisfy the International Technology Roadmap for Semiconductors high‐performance requirement. Finally, through benchmarking energy‐delay product against other typical 2D FETs, AsP FETs are revealed to be strongly competitive 2D FETs. Abstract : Monolayer black arsenic‐phosphorus (AsP) reveals a direct bandgap of 0.92 eV and anisotropic carrier effective mass. The impacts of transport direction on n‐type and p‐type AsP field‐effect transistors (FETs) are thoroughly evaluated, and the operation of the FETs is evaluated according to the International Technology Roadmap for Semiconductors requirements. Furthermore, the energy‐delay product of AsP FETs is analyzed and compared to some recently proposed 2D FETs.