Customizing the Polarity of Single‐Walled Carbon‐Nanotube Field‐Effect Transistors Using Solution‐Based Additives. (29th November 2019)

• Record Type: Journal Article
• Authors: Salazar‐Rios, Jorge Mario; Sengrian, Aprizal Akbar; Talsma, Wytse; Duim, Herman; Abdu‐Aguye, Mustapha; Jung, Stefan; Fröhlich, Nils; Allard, Sybille; Scherf, Ullrich; Loi, Maria Antonietta
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-11-29
• Subjects: doping -- field‐effect transistors -- polarity control -- polymer wrapping -- single‐walled carbon nanotubes; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201900789
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Polarity control in semiconducting single‐walled carbon‐nanotube field‐effect transistors (s‐SWNT FETs) is important to promote their application in logic devices. The methods to turn the intrinsically ambipolar s‐SWNT FETs into unipolar devices that have been proposed until now require extra fabrication steps that make preparation longer and more complex. It is demonstrated that by starting from a highly purified ink of semiconducting single‐walled carbon nanotubes sorted by a conjugated polymer, and mixing them with additives, it is possible to achieve unipolar charge transport. The three additives used are benzyl viologen (BV), 4‐(2, 3‐dihydro‐1, 3‐dimethyl‐1H‐benzimidazol‐2‐yl)‐ N, N ‐dimethylbenzenamine (N‐DMBI), which give rise to n‐type field‐effect transistors, and 2, 3, 5, 6‐tetrafluoro‐7, 7, 8, 8‐tetracyanoquinodimethane (F4 ‐TCNQ) which gives rise to p‐type transistors. BV and N‐DMBI transform the s‐SWNTs transistors from ambipolar with mobility of the order of 0.7 cm 2 V −1 s −1 to n‐type with mobility up to 5 cm 2 V −1 s −1 . F4 ‐TCNQ transform the ambipolar transistors in p‐type with mobility up to 16 cm 2 V −1 s −1 . Abstract : Polarity control of single‐walled carbon‐nanotube field‐effect transistors is achieved with a one‐step process. Initially, different molecules are mixed singularly with highly pure inks of semiconducting carbon nanotubes. Devices fabricated with those inks show enhanced electron transport or hole enhanced transport depending on the nature of the molecule used as an additive.