Cu2O Heterostructured GaN Thin Film and GaN Nanowire Piezoelectric Nanogenerators. Issue 7 (9th March 2020) - Waseem, Aadil
Abstract : Herein, a c ‐plane GaN thin film (TF) and c ‐axis GaN nanowires are grown using metal‐organic chemical vapor deposition (MOCVD) and then utilized in the fabrication of piezoelectric nanogenerators (PENGs). The piezoelectric performance of GaN‐based PENGs is tuned by sputtering a resistive layer of Cu2 O on GaN TFs and nanowires. A significant enhancement in the piezoelectric output of a Cu2 O‐coated GaN TF‐based PENG is observed compared with that of a pristine GaN TF‐based PENG. The enhanced output is attributed to the high resistivity of Cu2 O, which is controlled by conducting Cu2 O sputtering in "0" sccm oxygen flow. Furthermore, a GaN/Cu2 O core–shell nanowire‐based PENG is fabricated to enhance the flexibility and stability of nanogenerators. Abstract : A GaN/Cu2 O core–shell nanowire‐based piezoelectric nanogenerator (NW‐PENG) exhibits enhanced flexibility, stability, and piezoelectric output voltage. Cu2 O with optimized resistivity is sputtered on metal‐organic chemical vapor deposition (MOCVD)‐grown c ‐axis GaN NWs. To enhance the stability and flexibility of the NW‐PENG, the core–shell NWs are encapsulated in polydimethylsiloxane (PDMS) and transferred to an indium tin oxide (ITO)‐deposited flexible poly(ethylene terephthalate) (PET) substrate.