Bridging the van der Waals Interface for Advanced Optoelectronic Devices. Issue 7 (23rd December 2019)

• Record Type: Journal Article
• Authors: Wen, Yao; He, Peng; Yao, Yuyu; Zhang, Yu; Cheng, Ruiqing; Yin, Lei; Li, Ningning; Li, Jie; Wang, Junjun; Wang, Zhenxing; Liu, Chuansheng; Fang, Xuan; Jiang, Chao; Wei, Zhipeng; He, Jun
• Is Part Of: Advanced materials. Volume 32:Issue 7(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-12-23
• Subjects: artificial vacancies -- bridged heterostructures -- optoelectronic devices -- orbital hybridization -- vdW gap; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201906874
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Van der Waals (vdW) heterostructures exhibit excellent optoelectronic properties and novel functionalities. However, their applicability is impeded due to the common issue of the tunneling barrier, which arises from the vdW gap; this significantly increases the injection resistance of the photoexcited carriers. Herein, a generic strategy is demonstrated to eliminate the vdW gap in a broad class of heterostructures. It is observed that the vdW gap in the interface is bridged via strong orbital hybridization between the interface dangling bonds of nonlayered chalcogenide semiconductors and the artificially induced vacancies of transition metal chalcogenides (TMDCs). The photoresponse times of bridged PbS/ReS2, PbS/MoSe2, and PbS/MoS2 are ≈30, 51, and 43 µs, respectively. The photon‐triggered on/off ratio of the bridged PbS/MoS2, ZnSe/MoS2, and ZnTe/MoS2 heterostructures exceed 10 6, 10 5, and 10 5, respectively. These are several orders of magnitude higher than common vdW heterostructures. The findings obtained in this study present a versatile strategy for overcoming the performance limitations of vdW heterostructures. Abstract : A generic strategy is demonstrated to eliminate the van der Waals (vdW) gap in a broad class of heterostructures. The vdW gap is bridged via strong orbital hybridization, resulting in reduced interface transfer resistance. The photon‐triggered on/off ratio and photoresponse time of the bridged heterostructures are several orders of magnitude higher than that of common vdW heterostructures.