Electrical and optical properties of Zr doped β-Ga2O3 single crystals. (3rd July 2019)

• Record Type: Journal Article
• Authors: Saleh, Muad; Bhattacharyya, Arkka; Varley, Joel B.; Swain, Santosh; Jesenovec, Jani; Krishnamoorthy, Sriram; Lynn, Kelvin
• Is Part Of: Applied physics express. Volume 12:Number 8(2019)
• Publication Date: 2019-07-03
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab2b6c
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Sn and Si are the typical dopants for achieving tunable n-type conductivity of β -Ga2 O3 single crystals grown from the melt. Here, we explore Zr doping in β -Ga2 O3 as assessed with UV–vis-NIR, Hall Effect, I – V, and CV measurements and hybrid functional calculations. Single crystals were grown from the melt with nominal Zr doping between 0.1 and 0.5 at% using Czochralski and vertical gradient freeze methods in Ar + O2 . Our results suggest that ZrGa behaves as a shallow donor, with a measured activation energy of ∼10 meV. Our samples show an electron mobility ∼73–112 cm 2 V −1 s −1, resistivity ∼0.08–0.01 ohm cm, and carrier density of n = 6.5 × 10 17 −5 × 10 18 cm 3 at room temperature.