Room‐Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2. Issue 17 (13th March 2019)

• Record Type: Journal Article
• Authors: Doan, Manh‐Ha; Jin, Youngjo; Chau, Tuan Khanh; Joo, Min‐Kyu; Lee, Young Hee
• Is Part Of: Advanced materials. Volume 31:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-03-13
• Subjects: carrier transport -- Coulomb drag -- heterostructures -- quantum interference -- tungsten diselenide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201900154
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Mesoscopic fluctuations, manifesting the quantum interference (QI) of electrons, have been theoretically proposed in bilayer Coulomb drag systems. Unfortunately, these phenomena are usually observed at cryogenic temperatures, which severely limits their novel physics for pragmatic applications. In this paper, observation of room‐temperature QI and Coulomb drag in a multilayer WSe2 transistor is reported via graphene contacts separately at its top and bottom layers. The central layers of WSe2 act as an insulating region with a width of few nanometers, which spatially separates the top and bottom conducting channels and provides a strong Coulomb interaction between them, leading to large conductance oscillations at room temperature. The gradual suppression of the oscillations with the increase in the applied magnetic field and/or injected current further confirms the QI phenomenon. With the decrease in temperature, the Coulomb drag effect is exhibited in the system owing to the increased thickness of the insulating region. This study reveals a novel approach for realization of advanced quantum electronics operating at high temperatures. Abstract : Quantum interference (QI) in a multilayer WSe2 is clearly observed at room temperature via graphene contacts. A vertical WSe2 homojunction exhibits a clean and sharp interface, becoming a good platform to simultaneously investigate QI and Coulomb drag effects. This study provides a novel approach for the realization of advanced quantum electronics operating at high temperatures.