Band Engineering: Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals (Adv. Mater. 17/2019). Issue 17 (18th April 2019)

• Record Type: Journal Article
• Authors: Sun, Yan; Zhou, Zishu; Huang, Zhen; Wu, Jiangbin; Zhou, Liujiang; Cheng, Yang; Liu, Jinqiu; Zhu, Chao; Yu, Maotao; Yu, Peng; Zhu, Wei; Liu, Yue; Zhou, Jian; Liu, Bowen; Xie, Hongguang; Cao, Yi; Li, Hai; Wang, Xinran; Liu, Kaihui; Wang, Xiaoyong; Wang, Jianpu; Wang, Lin; Huang, Wei
• Is Part Of: Advanced materials. Volume 31:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-04-18
• Subjects: 2D materials -- band alignment -- heterostructures -- interlayer interactions -- lead iodide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201970121
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : In article number 1806562, Lin Wang, Wei Huang, and co‐workers describe the synthesis of PbI2 with a unique electronic structure down to the atomic scale by a solution method, and construct versatile interfacial semiconductors via band alignment engineering. As an illustrative example, MoS2, WS2, and WSe2 monolayers show completely distinct light–matter interactions when interfacing with PbI2, which may further widen their applications in on‐chip optoelectronic devices, such as light‐emitting diodes, photodetectors, and photovoltaic devices.