A New Memristor with 2D Ti3C2Tx MXene Flakes as an Artificial Bio‐Synapse. Issue 25 (8th May 2019)

• Record Type: Journal Article
• Authors: Yan, Xiaobing; Wang, Kaiyang; Zhao, Jianhui; Zhou, Zhenyu; Wang, Hong; Wang, Jingjuan; Zhang, Lei; Li, Xiaoyan; Xiao, Zuoao; Zhao, Qianlong; Pei, Yifei; Wang, Gong; Qin, Cuiya; Li, Hui; Lou, Jianzhong; Liu, Qi; Zhou, Peng
• Is Part Of: Small. Volume 15:Issue 25(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-08
• Subjects: memristors -- MXene (Ti3C2Tx) -- synapses -- Ti and O vacancies; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201900107
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Two‐dimensional (2D) materials have attracted extensive research interest in academia due to their excellent electrochemical properties and broad application prospects. Among them, 2D transition metal carbides (Ti3 C2 T x ) show semiconductor characteristics and are studied widely. However, there are few academic reports on the use of 2D MXene materials as memristors. In this work, reported is a memristor based on MXene Ti3 C2 T x flakes. After electroforming, Al/Ti3 C2 T x /Pt devices exhibit repeatable resistive switching (RS) behavior. More interestingly, the resistance of this device can be continuously modulated under the pulse sequence with 10 ns pulse width, and the pulse width of 10 ns is much lower than that in other reported work. Moreover, on the nanosecond scale, the transition from short‐term plasticity to long‐term plasticity is achieved. These two properties indicate that this device is favorable for ultrafast biological synapse applications and high‐efficiency training of neural networks. Through the exploration of the microstructure, Ti vacancies and partial oxidation are proposed as the origins of the physical mechanism of RS behavior. This work reveals that 2D MXene Ti3 C2 T x flakes have excellent potential for use in memristor devices, which may open the door for more functions and applications. Abstract : Two‐dimensional (2D) Ti3 C2 T x is used as the functional layer of a memristor . Ti vacancies and partial oxidation are proposed as the origins of the physical mechanism of resistive switching behavior. The resistance can be modulated under the pulse sequence with 10 ns pulse width. On the nanosecond scale, the transition from short‐term plasticity to long‐term plasticity is achieved.