:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019). Issue 7 (3rd April 2019)

• Record Type: Journal Article
• Authors: Chen, Changdong; Yang, Bo‐Ru; Li, Gongtan; Zhou, Hang; Huang, Bolong; Wu, Qian; Zhan, Runze; Noh, Yong‐Young; Minari, Takeo; Zhang, Shengdong; Deng, Shaozhi; Sirringhaus, Henning; Liu, Chuan
• Is Part Of: Advanced science. Volume 6:Issue 7(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-04-03
• Subjects: carrier mobility -- doping -- four‐probe measurement -- surface potential scanning -- thin‐film transistors; Science -- Periodicals; 505
• DOI: 10.1002/advs.201970040
• Languages: English
• ISSNs: 2198-3844

Abstract

Abstract : In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN X encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility.