Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV. (8th July 2019)

• Record Type: Journal Article
• Authors: Nagaoka, Akira; Nishioka, Kensuke; Yoshino, Kenji; Kuciauskas, Darius; Scarpulla, Michael A.
• Is Part Of: Applied physics express. Volume 12:Number 8(2019)
• Publication Date: 2019-07-08
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab27fb
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 10 17 cm −3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 10 16 cm −3, yet we also demonstrate CdTe with >10 17 cm −3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.