Cite
HARVARD Citation
Huang, Y. et al. (2020). Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm. 22 (7), pp. 1160-1165. [Online].
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Huang, Y. et al. (2020). Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm. 22 (7), pp. 1160-1165. [Online].