A multilevel vertical photonic memory transistor based on organic semiconductor/inorganic perovskite quantum dot blends. Issue 8 (29th January 2020)

• Record Type: Journal Article
• Authors: Yang, Huihuang; Yan, Yujie; Wu, Xiaomin; Liu, Yaqian; Chen, Qizhen; Zhang, Guocheng; Chen, Shaomin; Chen, Huipeng; Guo, Tailiang
• Is Part Of: Journal of materials chemistry. Volume 8:Issue 8(2020)
• Page Start: 2861
• Page End: 2869
• Publication Date: 2020-01-29
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc06622e
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : A vertical photonic memory transistor based on organic semiconductor/inorganic perovskite quantum dots blends was fabricated, which presents new routes for low operational conditions for high-performance photonic memory with high storage density. Abstract : Organic field-effect transistor (OFET) photonic memory devices have emerged as one of the most promising memory devices for the era of big data due to their easily integrated structure, non-destructive reading and multi-bit data storage. However, the light intensity for the realization of high discrepancies between multilevel storage is across several orders of magnitude and the responding erasing voltage required is up to tens of volts for several seconds. Hence, for the first time, a vertical OFET photonic memory device based on organic semiconductor/inorganic perovskite quantum dot blends was demonstrated. Owing to the intimate interaction between the channels and charge trapping layers (perovskite quantum dots) and vertical architectures with ultrashort channels (downscaling the channel length from tens of micrometers to ∼50 nm), the photonic memory transistor realized the recognition of light information and displayed 8 current level storage with high discrepancies, along with a large memory window (66.5 V) under low light intensity (0.05–0.5 mW cm −2 ) and relatively low erasing voltage pulses (≤10 V); thus, it is better than previously reported traditional photonic memory devices. Moreover, the memory devices showed excellent multilevel switching responses and could maintain stable endurance properties and retention characteristics. This work not only provides a simple implementation method of high-performance photonic memory devices, but also promises great potential for the realization of multilevel storage under low illumination conditions and low erasing voltage.