High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst. Issue 8 (6th February 2020)

• Record Type: Journal Article
• Authors: Yang, Fengyou; Chen, Shengyao; Feng, Huimin; Wang, Cong; Wang, Xiaofeng; Wang, Shu; Zhou, Zhican; Li, Bo; Ma, Lijun; Yang, Haiguang; Xie, Yong; Liu, Qian
• Is Part Of: Journal of materials chemistry. Volume 8:Issue 8(2020)
• Page Start: 2664
• Page End: 2668
• Publication Date: 2020-02-06
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc06996h
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : We develop a high-performance nonvolatile MoS2 -based optoelectronic memory device based on a MoS2 bilayer grown by a Au catalyst. Abstract : Compared with a conventional CMOS-based optoelectronic system, two-dimensional (2D) material-based nonvolatile optoelectronic memory has attracted increasing attention because of its ability to rapidly transform optoelectronic signals, as well as simultaneously store and output signals. However, existing two-dimensional optoelectronic memory cannot meet requirements in performance and cost and so on, and needs urgently to be explored. Here we developed a high-performance nonvolatile MoS2 -based optoelectronic memory device based on a MoS2 bilayer grown by a Au catalyst. The device exhibits an excellent performance index of current on/off ratio ∼8 × 10 4 and retention time ∼2.2 × 10 4 s. Experimental observations and simulation calculations have revealed that the optoelectronic memory mechanism can be ascribed to defects including S vacancies and disorder of atoms in 2D MoS2 materials.