Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies. Issue 7 (4th February 2020)

• Record Type: Journal Article
• Authors: Bazioti, Calliope; Olsen, Vegard S.; Kuznetsov, Andrej Y.; Vines, Lasse; Prytz, Øystein
• Is Part Of: Physical chemistry chemical physics. Volume 22:Issue 7(2020)
• Page Start: 3779
• Page End: 3783
• Publication Date: 2020-02-04
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c9cp06025a
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : N2 -filled voids along grain boundaries were revealed by STEM-EELS, showing elemental redistribution and bonding re-arrangement in annealed (ZnO)1− x (GaN) x . Abstract : Direct evidence of N2 formation after annealing of (ZnO)1− x (GaN) x alloys was revealed. N2 was trapped by VZn+Ga -clusters, forming faceted voids along grain boundaries. This study shows that N–N bonding is a competitive path for nitrogen after annealing, in addition to the increasing Ga–N bonds, indicating that N in O substitution sites (NO ) is not a stable configuration.