Energy conversion efficiency in betavoltaic cells based on the diamond Schottky diode with a thin drift layer. (March 2020)

• Record Type: Journal Article
• Authors: Grushko, V.; Beliuskina, O.; Mamalis, A.; Lysakovskiy, V.; Mitskevich, E.; Kiriev, A.; Petrosyan, E.; Chaplynskyi, R.; Bezshyyko, O.; Lysenko, O.
• Is Part Of: Applied radiation and isotopes. Volume 157(2020:Mar.)
• Publication Date: 2020-03
• Subjects: Betavoltaic -- Diamond -- Energy conversion efficiency -- Thin drift layer -- Schottky diode; Radiology -- Periodicals; Radiation -- Industrial applications -- Periodicals; Nuclear chemistry -- Periodicals; Internet resource; Periodical; 660.298
• DOI: 10.1016/j.apradiso.2019.109017
• Languages: English
• ISSNs: 0969-8043

Abstract

Abstract: The HPHT diamond Schottky diode was assembled as a Metal/Intrinsic/p-doped structure betavoltaic cell (BC) with a very thin (1 μ m) drift layer and tested under 5–30 keV electron beam irradiation using a scanning electron microscope (SEM). The effect of the β-radiation energy and the backscattering of electrons on the energy conversion was studied. From the results obtained, it is shown that, the efficiency of the investigated BC increases from 1.01 to 3.75% with the decrease of β-particle energy from 30 to 5 keV due to an increase of the electron beam absorption in a thin drift layer. Maximum efficiency is achieved when the electron beam energy is close to the average β-decay energy of 3 H. The BC maximum output power of the 1.6 μW was obtained at an electron beam energy of 15 keV, that matches the β-decay energy of 63 Ni. The total BC conversion efficiency at 15 keV electron-beam energy is about 3%. The calculations indicated that a preferable β-source for the diamond based BCs with a thin (1 μ m) drift layer is 63 Ni. Highlights: The total conversion efficiency (TCE) of the diamond cell with a thin drift layer increases while the beam energy decrease. The most preferred beta source for the diamond Schottky diode with a thin drift layer is 63 Ni. The β-backscattered coefficient and the energy loss in the electrode significantly affects the TCE at low beam energies. The lateral electron spread can lead to a significant loss of the output power and TCE at the edges of the drift layer.