Dielectric, ferroelectric, and photoluminescent properties of Sm-doped Bi4Ti3O12 thin films synthesized by sol-gel method. Issue 16 (November 2018)

• Record Type: Journal Article
• Authors: Du, Xingru; Huang, Wenhua; He, Shuai; Santhosh Kumar, T.; Hao, Aize; Qin, Ni; Bao, Dinghua
• Is Part Of: Ceramics international. Volume 44:Issue 16(2018)
• Page Start: 19402
• Page End: 19407
• Publication Date: 2018-11
• Subjects: BSmT thin film -- Dielectric -- Ferroelectric -- Photoluminescence -- Lifetime; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2018.07.174
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: We report on the structure, dielectric, ferroelectric, and photoluminescent properties of Sm 3+ -doped Bi4 Ti3 O12 thin films which were prepared on fused silica and Pt/Ti/SiO2 /Si substrates by sol-gel method. The X-ray diffraction analysis confirmed that the Bi4- x Sm x Ti3 O12 (BSmT) thin films were well crystallized in layered perovskite structure without any secondary phase. Raman spectra indicated that the structure of BSmT thin films was significantly distorted because of the Sm 3+ doping. An appropriate doping amount of Sm 3+ ions leads to obvious enhancement in ferroelectric and dielectric properties of BSmT thin films due to structure distortion and reduction in defects. In addition, the BSmT thin films also show orange-red color emission at 601 nm and long florescence lifetime (> 0.6 ms). This study indicated that lead-free BSmT thin films, which are featuring good electrical and photoluminescent properties, may have potential applications in integrated optoelectronic devices.