SiC MOSFETs robustness for diode-less applications. Issue 3 (3rd July 2018)

• Record Type: Journal Article
• Authors: Avino-Salvado, O.; Cheng, C.; Buttay, C.; Morel, H.; Labrousse, D.; Lefebvre, S.; Ali, M.
• Is Part Of: EPE journal. Volume 28:Issue 3(2018)
• Page Start: 128
• Page End: 135
• Publication Date: 2018-07-03
• Subjects: MOSFET -- Silicon Carbide (SiC) -- reliability -- robustness -- threshold voltage -- intrinsic diode -- diode-less -- oxide traps; Power electronics -- Periodicals; 621.31705
• DOI: 10.1080/09398368.2018.1456836
• Languages: English
• ISSNs: 0939-8368

Abstract

ABSTRACT: Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.