A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4. Issue 4 (6th January 2020)

• Record Type: Journal Article
• Authors: Tanishita, Taiki; Suekuni, Koichiro; Nishiate, Hirotaka; Lee, Chul-Ho; Ohtaki, Michitaka
• Is Part Of: Physical chemistry chemical physics. Volume 22:Issue 4(2019)
• Page Start: 2081
• Page End: 2086
• Publication Date: 2020-01-06
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c9cp06233e
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Co-substitution of Ge and P for Sb in Cu3 SbS4 famatinite boosted dimensionless thermoelectric figure of merit. Abstract : Famatinite Cu3 SbS4 has attracted attention for its potential application in thermoelectric (TE) contexts. In this work, we report the impacts of co-substituting Ge and P for Sb on TE properties. Melting and heat treatment methods were adopted to synthesize samples of Cu3 Sb1− x − y Ge x P y S4 ( x ≤ 0.4, y ≤ 0.3). In this system, Ge functioned as an acceptor for doping a hole to the valence band, which led to enhancement of the TE power factor. Contrastingly, P barely altered the electronic structure. Furthermore, both Ge and P acted as point defects, which effectively decreased lattice thermal conductivity. The combined effects of the co-substitution gave rise to an enhanced dimensionless figure of merit, ZT, of 0.67 at 673 K.