Cite
HARVARD Citation
Chang, H. et al. (2017). Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance. Scientific reports. 7 (1), pp. 1-9. [Online].
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Chang, H. et al. (2017). Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance. Scientific reports. 7 (1), pp. 1-9. [Online].