Reversible Optical and Electrical Switching of Air‐Stable OFETs for Nonvolatile Multi‐Level Memories and Logic Gates. (27th October 2015)

• Record Type: Journal Article
• Authors: Qian, Yan; Li, Wenwen; Li, Wen; Xu, Xiuxia; Lin, Zongqiong; Xie, Linghai; Yi, Mingdong; Huang, Wei
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 12(2015:Dec.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-10-27
• Subjects: air stability -- logic gates -- multi‐bit memory -- organic semiconductors -- photochromophores; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500230
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Air‐stable multi‐bit and reversible nonvolatile memories of photochromophore‐based organic field‐effect transistors (OFETs) are realized using independent light or electric modulation. The distinct current states can be obtained independently by either voltage or light programming and are highly stable in ambient atmosphere with retention time over 10 4 s.