Cite
HARVARD Citation
Xu, H. et al. (2020). Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides. Advanced materials interfaces. 7 (1), p. n/a. [Online].
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Xu, H. et al. (2020). Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides. Advanced materials interfaces. 7 (1), p. n/a. [Online].