Growth and gas sensing properties of methylammonium tin iodide thin film. (15th March 2020) - Hien, Vu Xuan
Abstract: Methylammonium tin iodide (MASnI3 ) is a p-type semiconductor with excellent optical versus electrical properties. This work introduces a process for growing high-purity MASnI3 thin films via thermal evaporation. The growth process of the MASnI3 thin film was proposed and discussed. The gas sensing properties of the MASnI3 thin film were investigated at room temperature with/without illumination. The film exhibited the highest selectivity toward NO2 (detection limit of 25 ppb). Furthermore, the sensing performance of the device was excellent comparing with those of recent NO2 sensing candidates. The gas sensing mechanism of the device was discussed. Graphical abstract: Image, graphical abstract