Direct bonding of high dielectric oxides for high-performance transistor applications. (15th March 2020)

• Record Type: Journal Article
• Authors: Xu, Jikai; Wang, Chenxi; Ji, Xiaoliang; An, Qi; Tian, Yanhong; Suga, Tadatomo
• Is Part Of: Scripta materialia. Number 178(2020)
• Page Start: 307
• Page End: 312
• Publication Date: 2020-03-15
• Subjects: Direct bonding -- Al2O3/YSZ heterostructure -- Interface; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2019.11.055
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: We developed a plasma activation process using a gas mixture of O2 /NH3 /H2 O for direct bonding, which realized the combination of bulk aluminum oxide (Al2 O3 ) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time. The bonding could withstand multiple mechanical grinding and polishing processes and exhibited sufficient bonding strength for device micro/nanofabication. A nanoscale, sharp, and layered crystalline bonding interface with fewer grain boundaries was confirmed by transmission electron microscopy. The interfacial structure is well-suited for superior performance in high dielectric constant metal–oxide–semiconductor field-effect transistors. Moreover, this bonding method is universal for the fabrication of Al2 O3 /SiO2 and YSZ/SiO2 heterostructures. Graphical abstract: Fabrication of the Al2 O3 /YSZ heterogeneous structure using the O2 /NH3 /H2 O plasma activation, which was also universal for the direct bonding Al2 O3 /SiO2 and YSZ/SiO2 . Image, graphical abstract