Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization. Issue 3 (21st October 2019)

• Record Type: Journal Article
• Authors: Miyoshi, Makoto; Harada, Hiroki; Egawa, Takashi; Takeuchi, Tetsuya
• Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor.
• Is Part Of: Physica status solidi. Volume 217:Issue 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-10-21
• Subjects: crystal morphologies -- metalorganic chemical vapor deposition -- nitrides -- semiconducting III–V materials; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900597
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Quaternary AlGaInN films with thickness greater than 150 nm are grown on c ‐plane GaN‐on‐sapphire templates by metalorganic chemical vapor deposition (MOCVD). The Al x Ga y In z N films near alloy composition lattice‐matching to GaN on sapphire (0.532 ≤ x ≤ 0.716, 0.146 ≤ y ≤ 0.366, and 0.092 ≤ z ≤ 0.182) are confirmed to be epitaxially grown, and they show relatively flat surfaces regardless of their lattice strain and their direction. The crystal mosaicity in the AlGaInN films is observed to take over that of the underlying GaN films. The refractive index of AlGaInN films ranges from ≈2.4 to 2.3 in the whole visible wavelengths, largely independent of their alloy compositions. Spectroscopic ellipsometry and photoluminescence analyses indicate that the MOCVD‐grown AlGaInN films have a certain degree of compositional fluctuation affecting their optical band edges. Abstract : Over 150‐nm‐thick AlGaInN films near alloy compositions lattice‐matching to GaN on sapphire are grown by metalorganic chemical vapor deposition, and they showed relatively flat surfaces regardless of their lattice strains. Their crystal mosaicity probably depended on that of the underlying GaN films. Optical characterization results indicated that there is a certain degree of compositional fluctuation in the films.