SIMS accurate determination of matrix composition of topological crystalline insulator material Pb1 − xSnxSe. (11th September 2019)

• Record Type: Journal Article
• Authors: Jakieła, Rafał; Galicka, Marta; Dziawa, Piotr; Springholz, Gunther; Barcz, Adam
• Is Part Of: Surface and interface analysis. Volume 52:Number 3(2020)
• Page Start: 71
• Page End: 75
• Publication Date: 2019-09-11
• Subjects: content determination -- SIMS -- topological insulator; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6705
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : Substitutional alloy Pb1 − x Sn x Se is a new class of electronic materials called topological crystalline insulators, which at the temperature range from 0 K to 300 K exhibit topological state at compositions in the range 0.18 < x < 0.40 (in the rock‐salt structure). In this report, we present a secondary ion mass spectrometry (SIMS) analysis technique to provide accurate Pb and Sn composition based on the measurement of PbCs + and SnCs + cluster ions intensities. Studies of Pb1 − x Sn x Se bulk samples with various values of x show that x /(1 − x ) is linear in relation to the intensity ratio of PbCs + /SnCs + over the range from x = 0.15 to x = 0.41. This technique allows us to obtain an accurate Sn content for multilayered heterostructures, quantum wells containing Pb1 − x Snx Se with different x values for each layer.