Cite
HARVARD Citation
Li, L. et al. (2020). An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode. Nanoscale. 12 (5), pp. 3267-3272. [Online].
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Li, L. et al. (2020). An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode. Nanoscale. 12 (5), pp. 3267-3272. [Online].