Cite
HARVARD Citation
Tu, R. et al. (2019). Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization. Journal of Asian ceramic societies. 7 (3), pp. 312-320. [Online].
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Tu, R. et al. (2019). Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization. Journal of Asian ceramic societies. 7 (3), pp. 312-320. [Online].