Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors. Issue 1 (December 2017)

• Record Type: Journal Article
• Authors: Wei, Tingting; Kanki, Teruo; Chikanari, Masashi; Uemura, Takafumi; Sekitani, Tsuyoshi; Tanaka, Hidekazu
• Is Part Of: Scientific reports. Volume 7:Issue 1(2017)
• Page Start: 1
• Page End: 7
• Publication Date: 2017-12
• Subjects: Natural history -- Research -- Periodicals; Biology -- Research -- Periodicals; Physical sciences -- Research -- Periodicals; Earth sciences -- Research -- Periodicals; Environmental sciences -- Research -- Periodicals; 502.85
• DOI: 10.1038/s41598-017-17468-x
• Languages: English
• ISSNs: 2045-2322

Abstract

Abstract Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO2 nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.