Low-temperature sintered Bi1-xSmxNbO4 microwave dielectrics. Issue 4 (April 2020)

• Record Type: Journal Article
• Authors: Lim, Hyuk; Oh, Young-Jei
• Is Part Of: Journal of the European Ceramic Society. Volume 40:Issue 4(2020)
• Page Start: 1191
• Page End: 1197
• Publication Date: 2020-04
• Subjects: Low temperature sintering -- Bi1-xSmxNbO4 Ceramics -- Dielectric property -- Ionic polarizability -- Bond valence; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2019.11.070
• Languages: English
• ISSNs: 0955-2219

Abstract

Abstract: The Bi1-x Smx NbO4 ceramics (x = 0 ∼ 0.1) was prepared by a conventional solid-state reaction at a low temperature from 900℃ to 960℃. The crystal structures of the Bi1-x Smx NbO4 ceramics were single orthorhombic (α-BiNbO4 ) phase at all sintering conditions. Dielectric constant (εr ), Quality factor (Q·f), and the Temperature coefficient of resonant frequency (τf ) were significantly affected by Sm 3+ substitution. The εr ranged from 42.79 ± 0.5 to 41.71 ± 0.5, with the highest Q·f value of 32, 100 ± 1605 GHz in the Bi1-0.99 Sm0.01 NbO4 ceramic. The Q·f values of the Bi1-x Smx NbO4 ceramics were improved compared to the BiNbO4 ceramics. The τf of the Bi1-x Smx NbO4 ranged from -2.3 ± 0.5 ppm/℃ to -11.4 ± 0.5 ppm/℃. The Clausius-Mossotti equation and additivity rule of dielectric polarizabilities were introduced in order to explain dependence of the dielectric constant as a function of Sm content. The τf of the Bi1-x Smx NbO4 ceramics with Sm content also was associated with the bond valence of the Bi1-x Smx NbO4 ceramics.