Detailed surface analysis of V‐defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition. Corrigendum. Issue 1 (27th January 2020)

• Record Type: Journal Article
• Authors: Gao, Jiang-Dong; Zhang, Jian-Li; Zhu, Xin; Wu, Xiao-Ming; Mo, Chun-Lan; Pan, Shuan; Liu, Jun-Lin; Jiang, Feng-Yi
• Is Part Of: Journal of applied crystallography. Volume 53:Issue 1(2020)
• Page Start: 302
• Page End: 302
• Publication Date: 2020-01-27
• Subjects: gallium nitride -- threading dislocations -- transmission electron microscopy; Crystallography -- Periodicals; 548.05
• DOI: 10.1107/S1600576720000163
• Languages: English
• ISSNs: 0021-8898

Abstract

Abstract : An error in the article by Gao, Zhang, Zhu, Wu, Mo, Pan, Liu & Jiang [ J. Appl. Cryst. (2019), 52, 637–642] is corrected. Abstract : An error in the article by Gao, Zhang, Zhu, Wu, Mo, Pan, Liu & Jiang [ J. Appl. Cryst. (2019), 52, 637–642] is corrected.