Cite
HARVARD Citation
Vettori, M. et al. (2019). Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111). Nanoscale advances. 1 (11), pp. 4433-4441. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Vettori, M. et al. (2019). Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111). Nanoscale advances. 1 (11), pp. 4433-4441. [Online].