Cite
HARVARD Citation
Hu, R. et al. (2020). Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors. Nanoscale. 12 (4), pp. 2787-2792. [Online].
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Hu, R. et al. (2020). Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors. Nanoscale. 12 (4), pp. 2787-2792. [Online].