Tuning magnetic anisotropy in Co–BaZrO3 vertically aligned nanocomposites for memory device integration. Issue 11 (16th October 2019)

• Record Type: Journal Article
• Authors: Zhang, Bruce; Huang, Jijie; Jian, Jie; Rutherford, Bethany X.; Li, Leigang; Misra, Shikhar; Sun, Xing; Wang, Haiyan
• Is Part Of: Nanoscale advances. Volume 1:Issue 11(2019)
• Page Start: 4450
• Page End: 4458
• Publication Date: 2019-10-16
• Subjects: 620.5
• DOI: 10.1039/c9na00438f
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : Ferromagnetic nanostructures with tunable, strong anisotropic properties are highly desired for their potential integration into spintronic devices. Abstract : Ferromagnetic nanostructures with strong anisotropic properties are highly desired for their potential integration into spintronic devices. Several anisotropic candidates, such as CoFeB and Fe–Pt, have been previously proposed, but many of them have limitations such as patterning issues or thickness restrictions. In this work, Co–BaZrO3 (Co–BZO) vertically aligned nanocomposite (VAN) films with tunable magnetic anisotropy and coercive field strength have been demonstrated to address this need. Such tunable magnetic properties are achieved through tuning the thickness of the Co–BZO VAN structures and the aspect ratio of the Co nanostructures, which can be easily integrated into spintronic devices. As a demonstration, we have integrated the Co–BZO VAN nanostructure into tunnel junction devices, which demonstrated resistive switching alluding to Co–BZO's immense potential for future spintronic devices.