Unique Layer‐Doping‐Induced Regulation of Charge Behavior in Metal‐Free Carbon Nitride Photoanodes for Enhanced Performance. Issue 2 (13th December 2019)

• Record Type: Journal Article
• Authors: Luan, Peng; Meng, Qingqiang; Wu, Jing; Li, Qinye; Zhang, Xiaolong; Zhang, Ying; O'Dell, Luke A.; Raga, Sonia R.; Pringle, Jennifer; Griffith, James C.; Sun, Chenghua; Bach, Udo; Zhang, Jie
• Is Part Of: ChemSusChem. Volume 13:Issue 2(2020)
• Page Start: 328
• Page End: 333
• Publication Date: 2019-12-13
• Subjects: carbon nitride -- charge behavior -- doping -- photoelectrochemistry -- water splitting; Green chemistry -- Periodicals; Sustainable engineering -- Periodicals; Chemistry -- Periodicals; Chemical engineering -- Periodicals; 660
• DOI: 10.1002/cssc.201902967
• Languages: English
• ISSNs: 1864-5631

Abstract

Abstract: Photoinduced charge carrier behavior is critical in determining photoelectrocatalytic activity. In this study, a unique layer‐doped metal‐free polymeric carbon nitride (C3 N4 ) photoanode is fabricated by using one‐pot thermal vapor deposition. With this method, a photoanode consisting of a phosphorus‐doped top layer, boron‐doped middle layer, and pristine C3 N4 bottom layer, was formed as a result of the difference in thermal polymerization kinetics associated with the boron‐containing H3 BO3 –melamine complex and the phosphorus‐containing H3 PO4 –dicyandiamide complex. This layer‐doping fabrication strategy effectively contributes to the formation of dual junctions that optimizing charge carrier behavior. The ternary‐layer C3 N4 photoanode exhibits significantly enhanced photoelectrochemical water oxidation activity compared to pristine C3 N4, with a record photocurrent density of 150±10 μA cm −2 at 1.23 V vs. RHE. This layer‐doping strategy provides an effective means for design and fabrication of photoelectrodes for solar water oxidation. Abstract : Charged with doping : A unique layer‐doped C3 N4 photoanode was designed and fabricated by using a one‐pot thermal vapor deposition method to form a photoanode consisting of a phosphorus‐doped top layer, boron‐doped middle layer, and pristine C3 N4 bottom layer. This ternary‐layer structure effectively optimizes the charge behavior to achieve a record photocurrent density of 150±10 μA cm −2 at 1.23 V vs. RHE.