Effects of Intrinsic Pentagon Defects on Electrochemical Reactivity of Carbon Nanomaterials. Issue 12 (14th February 2019)

• Record Type: Journal Article
• Authors: Zhu, Jiawei; Huang, Yupeng; Mei, Wencen; Zhao, Chenyang; Zhang, Chengtian; Zhang, Jian; Amiinu, Ibrahim Saana; Mu, Shichun
• Is Part Of: Angewandte Chemie international edition. Volume 58:Issue 12(2019)
• Page Start: 3859
• Page End: 3864
• Publication Date: 2019-02-14
• Subjects: carbon materials -- oxygen reduction -- pentagon defects -- supercapacitors -- zinc-air batteries; Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201813805
• Languages: English
• ISSNs: 1433-7851

Abstract

Abstract: Theoretical calculations reveal that intrinsic pentagons in the basal plane can contribute to the local electronic redistribution and the contraction of band gap, making the carbon matrix possess superior binding affinity and electrochemical reactivity. To experimentally verify this, a pentagon‐defect‐rich carbon nanomaterial was constructed by means of in situ etching of fullerene molecules (C60 ). The electrochemical tests show that, relative to hexagons, such a carbon‐based material with abundant intrinsic pentagon defects makes much greater contribution to the electrocatalytic oxygen reduction activity and electric double layer capacitance. It shows a four‐electron‐reaction mechanism similar to commercial Pt/C and other transition‐metal‐based catalysts, and a higher specific capacitance than many reported metal‐free carbon materials. These results show the influence of intrinsic pentagon defects for developing carbon‐based nanomaterials toward energy conversion and storage devices. Abstract : The intrinsic pentagon defects of carbon‐based materials make a greater contribution to the electrocatalytic oxygen reduction activity and electric double‐layer capacitance relative to common hexagons. When pentagon defects are combined with nitrogen dopants, the as‐obtained material shows promise in practical Zn‐‐air batteries (picture: left) and supercapacitors (right).