Growth of GaSb Crystal and Evaluation of Its Thermoelectric Properties Along (111) Plane. Issue 1 (25th October 2019)

• Record Type: Journal Article
• Authors: Jin, Min; Tang, Ziqi; Zhang, Rulin; Zhou, Lina; Chen, Yuqi; Zhao, Su; Chen, Yunxia; Wang, Xianghu; Li, Rongbin
• Is Part Of: Crystal research and technology. Volume 55:Issue 1(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-10-25
• Subjects: carrier concentration -- figure of merit -- GaSb crystal -- thermoelectric properties -- vertical Bridgman technique; Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201900156
• Languages: English
• ISSNs: 0232-1300

Abstract

Abstract: In this study, group III–V compound semiconductor gallium antimonide (GaSb) crystal is grown by the vertical Bridgman technique. A (111) twinning is generated in the as‐grown crystal due to its polarity behavior as the GaSb crystal has a zinc‐blende structure. Hall effect measurements illustrate that the as‐grown GaSb crystal has n‐type semiconductor behavior among the whole temperature range, and the carrier concentration reaches the highest value of 3.27 × 10 18 cm 3 at 900 K. Thermoelectric behavior of GaSb crystals along the (111) plane is investigated. It shows the lowest electrical conductivity of 53.2 S cm −1 and the highest Seebeck coefficient of −470.0 µV K −1 at 700 K. However, the largest power factor of 13.7 µW cm K −2 takes place at 600 K. For thermal conductivity ( k ), the k value always decreases with increasing temperature, and the lowest k that occurred at around 900 K is about 7.44 W m −1 K −1 . Finally, a maximum figure of merit of 0.082 is obtained at 700 K. Abstract : Group III–V compound semiconductor gallium antimonide (GaSb) crystal is grown by the vertical Bridgman technique. A (111) twinning is generated in the as‐grown crystal due to its polarity behavior as it has a zinc‐blende structure. GaSb crystal has an n‐type semiconductor behavior, and its maximum figure of merit along (111) plane is about 0.082 at 700 K.