High-k polymer materials containing cyclic carbonate as gate dielectrics for application in low-voltage operating organic thin-film transistors. Issue 48 (27th November 2019)

• Record Type: Journal Article
• Authors: Zou, Jiawei; Li, Shizhang; Wang, He; Wang, Wei; Shi, Zuosen; Jiang, Yuhang; Cui, Zhanchen; Yan, Donghang
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 48(2019)
• Page Start: 15357
• Page End: 15363
• Publication Date: 2019-11-27
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc04417e
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Low-voltage operating OTFTs have attracted interest as core components for low power applications and electronics. An ideal insulation material as the OTFT gate dielectric layer should possess high- k, good insulation property, mechanical flexibility and inherent nature suitable for growth of organic semiconductors. Abstract : Low-voltage operation in organic thin-film transistors (OTFTs) is desirable for low power applications and portable electronics. Using polymer materials with a high dielectric constant (high- k ) as gate dielectrics is an important way to realize low-voltage operating OTFTs. In this work, we synthesized a class of novel copolymers, which exhibit a high- k up to 7–10 depending on the content of cyclic carbonate. These copolymer materials are easily processed into films with a smooth surface topography and without pinholes by simple spin-coating. Moreover, they show excellent insulation properties with low leakage current densities (<7 × 10 −7 A cm −2 at 100 MV m −1 ) and small dielectric loss (<0.03, 10 2 –10 5 Hz). Meanwhile, cross-linked copolymers also display good flexibility and solvent resistance. To inspect their application prospects in low-voltage operating OTFTs, these copolymer films were employed as gate dielectrics to build p- and n-type OTFTs with C10 -DNTT and F16 CuPc as active layers, respectively. As a result, our OTFTs exhibit good field-effect properties at low operating voltages below 10 V, with high hole and electron mobility up to 9.7 and 0.005 cm 2 V −1 s −1 on average, respectively. Our results indicate a strategy on design of high- k polymer materials as gate dielectrics to pursue low-voltage operating OTFTs.