Surface functionalization of epitaxial graphene using ion implantation for sensing and optical applications. (February 2020)

• Record Type: Journal Article
• Authors: Kaushik, Priya Darshni; Rodner, Marius; Lakshmi, G.B.V.S.; Ivanov, Ivan G.; Greczynski, G.; Palisaitis, Justinas; Eriksson, Jens; Solanki, Pratima; Aziz, Anver; Siddiqui, Azher M.; Yakimova, Rositsa; Syväjärvi, Mikael; Yazdi, G. Reza
• Is Part Of: Carbon. Volume 157(2020)
• Page Start: 169
• Page End: 184
• Publication Date: 2020-02
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2019.09.071
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: Surface functionalization has been shown to allow tailoring of graphene lattice thus making it suitable for different applications like sensing, supercapacitance devices, drug delivery system and memory devices. In this work, surface functionalization of epitaxial graphene on SiC (EG/SiC) was done by ion beam technology (30 keV Ag − ions at fluences ranging from 5 × 10 12 ions/cm 2 to 5 × 10 14 ions/cm 2 ), which is one of the most precise techniques for introducing modifications in materials. Atomic force microscopy showed presence of nanostructures in ion implanted samples and Photoluminescence and X-ray photoelectron spectroscopy revealed that these are probably silicon oxy carbide. High-resolution transmission electron microscopy (HRTEM) showed decoupling of buffer layer from SiC substrate at many places in ion implanted samples. Further, HRTEM and Raman spectroscopy showed amorphization of both graphene and SiC at highest fluence. Fluence dependent increase in absorbance and resistance was observed. Gas sensors fabricated on pristine and ion implanted samples were able to respond to low concentration (50 ppb) of NO2 and NH3 gases. Detecting NH3 gas at low concentration further provides a simple platform for fabricating highly sensitive urea biosensor. We observed response inversion with increasing fluence along with presence of an optimal fluence, which maximized gas sensitivity of EG/SiC. Graphical abstract: Image 1